An ESD robust high holding voltage dual-direction SCR with symmetrical I-V curve by inserting a floating P+ in PWell-Reference-Cited by-同舟云学术

An ESD robust high holding voltage dual-direction SCR with symmetrical I-V curve by inserting a floating P+ in PWell

Published:2019-10 Issue: Volume:160 Page:107627
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Xijun,Wang Yang,Jin Xiangliang,Zhou Zijie,Lu Jun,Jia Dandan

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Zhan CR, Hong C, Laine J, Besse P. 2015. Development of high-voltage ESD protection devices on smart power technologies for automotive applications. In: 2015 IEEE 11th International Conference on ASIC (ASICON), Chengdu, 2015, pp. 1-4.

2. Zhan CR, Gill C, Hong C, Kaneshiro M. 2013. 'High-voltage asymmetrical bi-directional device for system-level ESD protection of automotive applications on a BiCMOS technology'. In: 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, Las Vegas, NV, 2013, pp. 1-8.

3. Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique;Salman;Microelectron Reliab,2016

4. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits;Ker;IEEE Trans Device Mater Reliab,2005

5. High-Performance bi-directional SCR developed on a 0.13um SOI-based smart power technology for automotive applications;Zhan;39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Tucson, AZ,2017

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