Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate-Reference-Cited by-同舟云学术

Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate

Published:2004-10 Issue:10-11 Volume:48 Page:1771-1775
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Yong Kyu,Sung Suk Kang,Sim Jae Sung,Song Ki Whan,Lee Jong Duk,Park Byung-Gook,Kang Sung Taeg,Chung Chilhee,Park Donggun,Kim Kinam

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Aviv frommer and david finzi NROM: a novel localized trapping, 2-bit nonvolatile memory cell;Eitan;IEEE Electron. Dev. Lett,2000

2. Lee YK, Kim TH, Lee SH, Lee JD, Park BG. Twin-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory by inverted sidewall patterning (TSM-ISP), IEEE Digest of Silicon Nanoelectronics Workshop, 2003, pp. 92–93

3. Electrons retention model for localized charge in oxide–nitride–oxide (ONO) dielectric;Lusky;IEEE Electron. Dev. Lett,2002

4. Data retention behavior of a SONOS type two-bit storage flash memory cell;Tsai;IEDM Tech. Digest,2001

5. Twin-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory by inverted sidewall patterning (TSM-ISP);Lee;IEEE Trans. Nanotechnol,2003

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