A Four-Bit-Per-Cell Program Method with Substrate-Bias Assisted Hot Electron Injection for Charge Trap Flash Memory Devices
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Published:2013-05-01
Issue:5
Volume:13
Page:3293-3297
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
An Ho-Myoung,Kim Hee-Dong,Kim Byungcheul,Kim Tae Geun
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering