LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process-Reference-Cited by-同舟云学术

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Published:2012-05 Issue: Volume:71 Page:19-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nichau A.,Durğun Özben E.,Schnee M.,Lopes J.M.J.,Besmehn A.,Luysberg M.,Knoll L.,Habicht S.,Mussmann V.,Luptak R.,Lenk St.,Rubio-Zuazo J.,Castro G.R.,Buca D.,Zhao Q.T.,Schubert J.,Mantl S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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3. Ando T, Frank MM, Choi K, Choi C, Bruley J, Hopstaken M, et al. Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42m) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process. In: Proc international electron device meeting; 2009. p. 423–6.

4. Measurement of effective electron mass in biaxial tensile strained silicon on insulator;Feste;Appl Phys Lett,2009

5. High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3gate stack;Minamisawa;Microelectron Eng,2011

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1. Lanthanide rare earth oxide thin film as an alternative gate oxide;Materials Science in Semiconductor Processing;2017-09

2. (Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices;ECS Transactions;2016-04-26

3. Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics;Microelectronic Engineering;2013-09

4. Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface;The Journal of Chemical Physics;2013-04-21

5. Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV;Applied Physics Letters;2013-01-21