Author:
Nichau A.,Rubio-Zuazo J.,Schnee M.,Castro G. R.,Schubert J.,Mantl S.
Subject
Physics and Astronomy (miscellaneous)
Reference22 articles.
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3. Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process
4. W. Yu, B. Zhang, Q.T. Zhao, J.M. Hartmann, D. Buca, A. Nichau, E. Durgun Özben, J. M. J. Lopes, J. Schubert, B. Ghyselen, and S. Mantl, in Proceedings of 6th Workshop of the Thematic Network on Silicon-on-Insulator Technology (EUROSOI) (2010), pp. 25–26.
5. MOSFETs with high mobility channel materials and higher-k/metal gate stack
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3 articles.
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