Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric-Reference-Cited by-同舟云学术

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Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

Published:2006-11-27 Issue:22 Volume:89 Page:222902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lopes J. M. J.,Roeckerath M.,Heeg T.,Rije E.,Schubert J.,Mantl S.,Afanas’ev V. V.,Shamuilia S.,Stesmans A.,Jia Y.,Schlom D. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2393156

Reference12 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

3. Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

4. Ternary rare-earth metal oxide high-k layers on silicon oxide

5. Band alignment between (100)Si and complex rare earth∕transition metal oxides

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