NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants-Reference-Cited by-同舟云学术

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

Published:2012-05 Issue: Volume:71 Page:101-105
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Martinez A.,Aldegunde M.,Brown A.R.,Roy S.,Asenov A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Lilienfeld JE. Method and apparatus for controlling electric current. US patent 1745,175; 1925.

2. Lilienfeld JE. Device for controlling electric current. US patent 1900,018; 1928.

3. Choi S-J, Moon D-I, Duarte JP, Kim S, Choi Y-K. A novel junctionless all-around-gate SONOS device on a quantum nanowire bulk substrate for 3D stack NAND flash memory. In: Tech dig pag. 74, symposium on VLSI technology, Kyoto, Japan; 2011.

4. Nanowire transistors without junctions

5. Junctionless multigate field-effect transistor;Lee;Appl Phys Lett,2009

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