Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism-Reference-Cited by-同舟云学术

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Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism

Published:2021-02 Issue: Volume:150 Page:106758
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mazumdar Kaushik,Saha Subindu,Ali Sk Rejuan,Pratap Singh Vishwanath

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT;Mazumdar;Superlattices and Microst.,2019

2. Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN;Mazumdar;Superlattices and Microst.,2015

3. Coherent electron–phonon coupling in tailored quantum systems;Roulleau;Nature Commun.,2011

4. Modeling of nanoscale devices;Anantram;Proceedings of the IEEE.,2008

5. Nonequilibrium Green’s function study of magnetoconductance features and oscillations in clean and disordered nanowires;Lahiri;Physical Rev. B,2018

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