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Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

  • Published:2019-01 Issue: Volume:125 Page:120-124
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Mazumdar Kaushik,Kala Sanam,Ghosal Aniruddha

Funder

Indian Institute of Technology (Indian School of Mines), Dhanbad

Department of Electronics Engineering, Indian Institute of Technology (Indian School of Mines), IIT (ISM), Dhanbad, India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. GaN HEMT reliability;DelAlamo;Microelectron. Reliab.,2009

2. Critical voltage for electrical degradation of GaN highelectron mobility transistors;Joh;IEEE Electron Dev. Lett.,2008

3. Mechanisms for electrical degradation of GaN highelectron mobility transistors;Joh,2006

4. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride;Guy;Appl. Phys. Lett.,1999

5. Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects;Jones;Microelectron. Reliab.,2015

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