Author:
Ansari Lida,Feldman Baruch,Fagas Giorgos,Colinge Jean-Pierre,Greer James C.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Simulation of junctionless Si nanowire transistors with 3nm gate length;Ansari;Appl Phys Lett,2010
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