Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations-Reference-Cited by-同舟云学术

Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations

Published:2000-06 Issue:6 Volume:40 Page:909-917
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Mouthaan A.J,Salm C,Lunenborg M.M,de Wolf M.A.R.C,Kuper F.G

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Hot-carrier effects in scaled MOS devices;Takeda;Microelectron Reliab,1993

2. A review of hot-carrier degradation mechanisms in MOSFETs;Acovic;Microelectron Reliab,1996

3. Hot-carrier related device reliability for digital and analogue CMOS circuits;Weber;Semicond Sci Technol,1995

4. Hot-Electron-Induced MOSFET Degradation—Model, Monitor, and Improvement;Hu;IEEE Trans Electron Devices,1985

5. Woltjer R, Paulzen GM. Universal description of hot-carrier induced interface states in NMOSFET’s. IEDM Techn Dig 1992;535–8

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voltage Acceleration of Power NLDMOS Hot Carrier Degradation;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

2. ESD Avalanche Diodes Degradation in EOS Regime;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Improving the drain-current expression of BSIM4 for hot-carrier degradation modeling that is suitable for analog applications;TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES;2015

4. A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04

5. Effect of Photo Misalignment on N-LDMOS Hot Carrier Device Reliability;2006 IEEE International Integrated Reliability Workshop Final Report;2006-10