A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors-Reference-Cited by-同舟云学术

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A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

Published:2007-04 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual
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Author:

Moens P.,Mertens J.,Bauwens F.,Joris P.,De Ceuninck W.,Tack M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4227591/4227592/04227681.pdf?arnumber=4227681

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Repetitive Pulse Testing for LDMOS Transistor Reliability;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Mechanism Analysis and Improved Model for HCI in 200V STI-based Triple RESURF LDMOS With n-p-n Layer;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. Impact of hot carrier on RF N-LDMOS reliability for radar application after pulsed life test;2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC);2021-12-20

4. Thermal effect on performance of N-MOSFET transistor under pulsed RF tests;2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2021-09-23

5. Three-point I–V spectroscopy deconvolves region-specific degradations in LDMOS transistors;Applied Physics Letters;2021-09-20

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