1. Highly manufacturable 1 Gb SDRAM;Kim,1997
2. A 0.15 μm DRAM Technology node for 4 Gb DRAM;Kim,1998
3. DRAM Technology perspective for Giga-bit era;Kim;IEEE Transaction of Electronic Devices,1998
4. A new memory cell technology using merged process with storage node and storage node contact process in COB stacked cell for 4 Gb DRAM and beyond;Chun,1998
5. Simultaneously formed storage node contact and metal contact cell (SSMC) for 1 Gb DRAM and beyond;Lee,1996