Optimization of a low-stress silicon nitride process for surface-micromachining applications-Reference-Cited by-同舟云学术

Optimization of a low-stress silicon nitride process for surface-micromachining applications

Published:1997-02 Issue:2 Volume:58 Page:149-157
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

French P.J,Sarro P.M,Mallée R,Fakkeldij E.J.M,Wolffenbuttel R.F

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. R.E. Jones and V.Y. Doo, Integrated circuit isolation with silicon nitride, Electrochem. Technol., (May–June) (1967) 297–298.

2. H. Seidel, L. Csepregi, A. Heuberger and H. Baumgärtel, Anisotropic etching of crystalline silicon in alkaline solutions I. Orientation dependence and behavior of passivation layers, J. Electrochem. Soc., 137 (1990) 3612–3626.

3. E. Kooi, J.G. van Lierop and J.A. Appels, Formation of silicon nitride at a Si–SiO2 interface during local oxidation of silicon and during heat treatment of oxidized silicon in NH3 gas, J. Electrochem. Soc., 123 (1976) 1117–1120.

4. G. Vdovine, S. Middelhoek and P.M. Sarro, Deformable mirror display with continuous reflecting surface micromachined in silicon, Proc. MEMS '95, Amsterdam, The Netherlands, Jan–Feb 1995, pp. 61–65.

5. K. Aratani, P.J. French, P.M. Sarro, R.F. Wolffenbuttel and S. Middelhoek, Surface micromachined tuneable interferometer array, Sensors and Actuators A, 43 (1994) 17–23.

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