Stoichiometric limitations of RF plasma deposited amorphous silicon–nitrogen alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers
2. Amorphous silicon‐silicon nitride thin‐film transistors
3. Amorphous Visible-Light Thin Film Light-Emitting Diode Having a-SiN:H as a Luminescent Layer
4. Visible thin film light emitting diode using a-SiN:H/a-SiC:H heterojunctions
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3. Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma;Plasma Chemistry and Plasma Processing;2010-08-01
4. Prestressed Ceramic Coatings for Enhanced Reliability of Silicon Wafer Fracture Strength;IEEE Transactions on Advanced Packaging;2007-11
5. High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature;Microelectronics Journal;2006-01
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