Amorphous Visible-Light Thin Film Light-Emitting Diode Having a-SiN:H as a Luminescent Layer-Reference-Cited by-同舟云学术

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Amorphous Visible-Light Thin Film Light-Emitting Diode Having a-SiN:H as a Luminescent Layer

Published:1993-04-15 Issue:Part 1, No. 4 Volume:32 Page:1534-1538
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Boonkosum Wirote,Kruangam Dusit,Panyakeow Somsak

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode;Philosophical Magazine;2013-08

2. Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode;Applied Physics Letters;2013-04-15

3. Electroforming of Amorphous Silicon Nitride Heterojunction $pin$ Visible Light Emitter;IEEE Transactions on Electron Devices;2011-08

4. Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode;Electrochemical and Solid-State Letters;2011

5. Investigation of local order of a-SiN:H films deposited by hot wire chemical vapour deposition (HWCVD);Applied Surface Science;2008-12

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