Transparent silicon nitride films prepared by surface wave plasma chemical vapor deposition under low temperature conditions-Reference-Cited by-同舟云学术

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Transparent silicon nitride films prepared by surface wave plasma chemical vapor deposition under low temperature conditions

Published:2015-04 Issue: Volume:580 Page:111-115
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Azuma Kazufumi,Ueno Satoko,Konishi Yoshiyuki,Takahashi Kazuhiro

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. Influence of electrical stress voltage on cathode degradation of organic light-emitting devices;Lien;J. Appl. Phys.,2001

3. Reliability and degradation of organic light emitting devices;Burrows;Appl. Phys. Lett.,1994

4. Encapsulation of organic light-emitting diode using thermal chemical-vapour-deposition polymer film;Yamashita;J. Phys. D. Appl. Phys.,2001

5. Ultra barrier flexible substrates for flat panel displays;Burrows;Displays,2001

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