Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)-Reference-Cited by-同舟云学术

Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)

Published:2000-08 Issue:1-2 Volume:371 Page:53-60
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Teker K,Jacob C,Chung J,Hong M.H

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. P. Pirouz, C.M. Chorey, T.T. Cheng, J.A. Powell, in: J.C.C. Fan, J.M. Phillips, B-Y. Tsaur (Eds.), Heteroepitaxy on Silicon II, Anaheim, California, USA, 21–23 April 1987, Materials Research Society Symposium Proceeding 91 (1987) 399.

3. Polycrystalline Semiconductors, Springer Proceedings in Physics, vol. 35;Pirouz,1989

4. Growth mechanism of 6H‐SiC in step‐controlled epitaxy

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