Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane-Reference-Cited by-同舟云学术

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Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Published:2023-08 Issue:8 Volume:9 Page:e19002
ISSN:2405-8440
Container-title:Heliyon
language:en
Short-container-title:Heliyon

Author:

Yoshimura Satoru^ORCID,Sugimoto Satoshi,Takeuchi Takae,Murai Kensuke,Kiuchi Masato

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference43 articles.

1. Advances in SiC power MOSFET technology;Dimitrijev;Microelectron. Reliab.,2003

2. Step-controlled epitaxial growth of SiC: high quality homoepitaxy;Matsunami;Mater. Sci. Eng. R,1997

3. Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750°C by chemical vapor deposition;Golecki;Appl. Phys. Lett.,1992

4. Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors;Krötz;Mater. Sci. Eng. B,1995

5. Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas;Ohshita;J. Cryst. Growth,1995

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