Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
3. Epitaxial growth of β-SiC single crystals by successive two-step CVD
4. Epitaxial growth and electric characteristics of cubic SiC on silicon
5. Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C
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1. Effects of deposition temperature on microstructures and ablative properties of SiC coatings prepared by CVD from methylsilane;Transactions of Nonferrous Metals Society of China;2023-12
2. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane;Heliyon;2023-08
3. Structure, microstructure and disorder in low temperature chemical vapor deposited SiC coatings;Journal of the European Ceramic Society;2023-08
4. Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane;AIP Advances;2022-11-01
5. Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films;Thin Solid Films;2022-10
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