Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl2H2NH3N2O mixtures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. See for example in S. M. Sze ‘VLSI Technology’, McGraw-Hill (1988)
2. Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide
3. Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 Gas
4. Silicon nitride and oxynitride films
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