Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)-Reference-Cited by-同舟云学术

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Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)

Published:1999-07 Issue:1-2 Volume:349 Page:230-237
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mao A.Y.,Son K.-A.,Hess D.A.,Brown L.A.,White J.M.,Kwong D.L.,Roberts D.A.,Vrtis R.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour deposition

2. Thin Ta2O5 films prepared by low pressure metal organic CVD

3. Deposition, annealing and characterisation of high-dielectric-constant metal oxide films

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1. Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition;Surfaces;2018-08-30

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3. Structural, optical and electrochromic properties of tantalum pentoxide-doped niobium pentoxide thin films;Journal of Sol-Gel Science and Technology;2015-08-23

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5. Mechanism of Difficulty to Study the Physics of Leakage Current Reduction by Nitridation of Silicon before High-k Dielectric Deposition Due to Change in Nucleation Characteristics and Some Other Factors;ECS Transactions;2012-04-27

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