1. Chin , A. Yu , Y.H. Chen , S.B. Liao , C.C. Chen , W.J. 2000 High quality La 2 O 3 and Al 2 O 3 gate dielectrics with equivalent oxide thickness 5-10 Å 16
2. High-k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
3. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004
4. XPS study of the surface carbonation/hydroxylation state of metal oxides;Gonzales-Elipe;Appl. Surf. Sci.,1990
5. Iwai , H. Ohmi , S.I. Akama , S. Ohshima , C. Kikuchi , A. Kashiwagi , I. Taguchi , J. Yamamoto , H. Tonotani , J. Kim , Y. Ueda , I. Kuriyama , A. Yoshihara , Y. 2002 Advanced gate dielectric materials for sub-100nm CMOS 625