Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition-Reference-Cited by-同舟云学术

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Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

Published:2001-02 Issue:1-2 Volume:382 Page:113-123
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Nishitani-Gamo Mikka,Xiao Changyong,Zhang Yafei,Yasu Eiji,Kikuchi Yuko,Sakaguchi Isao,Suzuki Toshimitsu,Sato Yoichiro,Ando Toshihiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Investigation of the boron incorporation in polycrystalline CVD diamond films by TEM, EELS and Raman spectroscopy

2. Variations of morphology and electrical property of diamond with doping using diborane in a methane–hydrogen gas mixture

3. Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

4. Comparison of P, N and B additions during CVD diamond deposition

5. Influence of phosphorus addition on diamond CVD

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111);Diamond and Related Materials;2024-04

2. N- and P-Type Doping of Diamonds: A Review;2024

3. Research of a weak negative thermal quenching effect of nitrogen vacancy centers in nitrogen-doped diamond;Journal of Luminescence;2023-02

4. Low-pressure diamond: from the unbelievable to technical products;ChemTexts;2021-03-16

5. Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition;Applied Physics Letters;2020-07-13

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