Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)-Reference-Cited by-同舟云学术

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Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)

Published:2024-04 Issue: Volume:144 Page:111032
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Larsson Karin,Zou Yiming

Funder

Swedish Research Council

Publisher

Elsevier BV

Reference50 articles.

1. Doping of diamond;Kalish;Carbon,1999

2. Growth and properties of CVD diamond films grown under H2S addition;Sternschulte;Diam. Relat. Mater.,2003

3. Hot-filament diamond deposition with sulfur addition;Haubner;Diam. Relat. Mater.,2003

4. Comparison of sulfur, boron, nitrogen and phosphorus additions during low-pressure diamond deposition;Haubner;Diam. Relat. Mater.,2005

5. Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition;Nishitani-Gamo;Thin Solid Films,2001

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