Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond-Reference-Cited by-同舟云学术

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Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

Published:1998-12 Issue:11-12 Volume:7 Page:1719-1722
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Ushizawa Koichi,Watanabe Kenji,Ando Toshihiro,Sakaguchi Isao,Nishitani-Gamo Mikka,Sato Yoichiro,Kanda Hisao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. The optical and electronic properties of semiconducting diamond

2. Comparison of electronic transport in boron‐doped homoepitaxial, polycrystalline, and natural single‐crystal diamond

3. Hall mobility and carrier concentration of boron-doped homoepitaxially grown diamond (001) films

4. Fano interference of the Raman phonon in heavily boron‐doped diamond films grown by chemical vapor deposition

5. Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance

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3. Enhanced electrochemical activity of boron-doped nanocarbon functionalized reticulated vitreous carbon structures for water treatment applications;Diamond and Related Materials;2024-01

4. Synthetic pathway of shallow n-type donor: Theoretical study of Li and B co-doped diamonds;Diamond and Related Materials;2024-01

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