Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition
Author:
Affiliation:
1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0009615
Reference37 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole
3. High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition
4. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond
5. Copper-doped mesoporous hydroxyapatite microspheres synthesized by a microwave-hydrothermal method using creatine phosphate as an organic phosphorus source: application in drug delivery and enhanced bone regeneration
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