1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
3. L. Kang, Y. Jeon, K. Onishi, B.H. Lee, W. Qi, R. Nieh, S. Gopalan, J.C. Lee. Proceedings of the Symposium on VLSI Technology Digest of Technical Papers, Honolulu, USA, June 15–17, 2000, p. 44.
4. J.C. Lee, W-Qi, R. Nie, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan. Proceedings of the MRS High-k Gate Dielectric Workshop, New Orleans, USA, 2000, p. 23.
5. S.A. Campbell, R. Smith, N. Hoilien, B. He, W.L. Gladfelter. Proceedings of the MRS High-k Gate Dielectric Workshop, New Orleans, USA, 2000, p. 9.