AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques-Reference-Cited by-同舟云学术

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Published:2001-11 Issue: Volume:398-399 Page:575-580
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bathe Ravi,Vispute R.D,Habersat Dan,Sharma R.P,Venkatesan T,Scozzie C.J,Ervin Matt,Geil B.R,Lelis A.J,Dikshit S.J,Bhattacharya R

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. GaN, AlN, and InN: A review

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Silicon Carbide and Related Materials: 1999, Part I–II,1999

4. Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C

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1. Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures;Japanese Journal of Applied Physics;2019-05-20

2. Improvement mechanism of sputtered AlN films by high-temperature annealing;Journal of Crystal Growth;2018-11

3. Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations;Bulletin of the Russian Academy of Sciences: Physics;2017-09

4. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates;Semiconductors;2016-09

5. Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates;Physica B: Condensed Matter;2016-08

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