Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage-Reference-Cited by-同舟云学术

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Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage

Published:2001-11 Issue: Volume:398-399 Page:523-526
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chang T.C.,Mor Y.S.,Liu P.T.,Tsai T.M.,Chen C.W.,Mei Y.J.,Sze S.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Material Science and the Electronic Packaging Roadmap

2. Proc. IEEE VIMC Conference;Pai,1989

3. Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects

4. Materials Issues with Thin Film Hydrogen Silsesquioxane Low K Dielectrics

5. Enhancing the Oxygen Plasma Resistance of Low-kMethylsilsesquioxane by H2Plasma Treatment

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