Enhancing the Oxygen Plasma Resistance of Low-kMethylsilsesquioxane by H2Plasma Treatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor;Journal of Nanoscience and Nanotechnology;2020-11-01
2. Improvement in photomask critical dimension uniformity using etch selectivity control;Vacuum;2016-01
3. Low-k material damage during photoresist ashing process;Journal of Applied Physics;2015-05-07
4. Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films;Materials Research Bulletin;2012-10
5. Evaluation of Absolute Flux of Vacuum Ultraviolet Photons in an Electron Cyclotron Resonance Hydrogen Plasma: Comparison with Ion Flux;Japanese Journal of Applied Physics;2012-08-20
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