High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference16 articles.
1. Takechi, K. and Hayama, H. Electrochem. Soc. Proc. 2nd Symp., TFT Technologies, 1994, 160
2. Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride
3. High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
4. Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous silicon
5. Frequency effects in processing plasmas of the VHF band
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