VHF-PECVD for a-Si:H and a-SiN:H Film Deposition-Reference-Cited by-同舟云学术

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VHF-PECVD for a-Si:H and a-SiN:H Film Deposition

Published:2019-09-30 Issue:5 Volume:28 Page:139-141
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:ASCT

Author:

Kim Jin Seok¹

Affiliation:

1. Tokyo Electron Technology Solutions Ltd., Nirasaki, Yamanashi 407-0192, Japan

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Reference31 articles.

1. Influence of Power-Source Frequency on the Properties of GD a-Si:H

2. S. Wolf, and RN. Tauber. Silicon Processing for VLSI Era, Process Technology (Lattice Press, Sunset Beach, California, 1986), 1.

3. Preparation of a-Si:H Films by VHF Plasma CVD

4. Structural, compositional and optical properties of PECVD silicon nitride layers

5. A study of hydrogenated amorphous silicon deposited by hot‐wall glow discharge

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