A study of hydrogenated amorphous silicon deposited by hot‐wall glow discharge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335773
Reference15 articles.
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4. Influence of Power-Source Frequency on the Properties of GD a-Si:H
5. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
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1. VHF-PECVD for a-Si:H and a-SiN:H Film Deposition;Applied Science and Convergence Technology;2019-09-30
2. Methods of deposition of hydrogenated amorphous silicon for device applications;Handbook of Thin Films;2002
3. Methods of Deposition of Hydrogenated Amorphous Silicon for Device Applications;Thin Films and Nanostructures;2002
4. Optical properties of hydrogenated amorphous silicon films doped with fluorinated gases;Journal of Non-Crystalline Solids;1995-01
5. Thin Film Deposition;Fundamentals of Semiconductor Processing Technology;1995
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