Photoemission study of the interface reaction between Ag and H2S treated InP(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Indium Phosphide and Related Materials: Processing, Technology, and Devices;Katz,1992
2. Surface structures and electronic states of H2S-treated InP(001)
3. Sulfur passivated InP(100): surface gaps and electron counting
4. Sulfurization of InP(001) surfaces studied by X-ray photoelectron and X-ray induced Auger electron spectroscopies (XPS/XAES)
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4. XAS study of Ni2P/MCM-41 passivated by O2/He and H2S/H2;Catalysis Communications;2014-01
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