Sulfur passivated InP(100): surface gaps and electron counting-Reference-Cited by-同舟云学术

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Sulfur passivated InP(100): surface gaps and electron counting

Published:1996-09 Issue: Volume:104-105 Page:434-440
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mitchell C.E.J.,Hill I.G.,McLean A.B.,Lu Z.H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces

2. Structure and bonding of tetrahedrally coordinated compound semiconductor cleavage faces

3. Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universality

4. Total-energy calculations of semiconductor surface reconstructions

5. Chemical, structural, and electronic properties of sulfur‐passivated InP(001) (2×1) surfaces treated with (NH4)2Sx

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate engineering for high-quality emission of free and localized excitons from atomic monolayers in hybrid architectures;Optica;2017-06-13

2. Methylthiol adsorption on GaAs(100)-(2 × 4) surface: Ab initio quantum-chemical analysis;Semiconductors;2008-09

3. Surface modification of III–V semiconductors: chemical processes and electronic properties;Progress in Surface Science;2002-07

4. Two types of sulfur-induced (2×1) reconstructions on InP(001);Surface Science;2001-06

5. Structural transformations of InP(001) surfaces;Surface Science;2000-11

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