Two types of sulfur-induced (2×1) reconstructions on InP(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference25 articles.
1. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors
2. S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
3. Chemical, structural, and electronic properties of sulfur‐passivated InP(001) (2×1) surfaces treated with (NH4)2Sx
4. (NH4)2Sx‐treated InP(001) studied by high‐resolution x‐ray photoelectron spectroscopy
5. Sulfurization of InP(001) surfaces studied by X-ray photoelectron and X-ray induced Auger electron spectroscopies (XPS/XAES)
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1. Probing Surface Chemistry at an Atomic Level: Decomposition of 1-Propanethiol on GaP(001) (2 × 4) Investigated by STM, XPS, and DFT;The Journal of Physical Chemistry C;2019-01-04
2. Stability of S and Se induced reconstructions on GaP(001)(2×1) surface;Physica B: Condensed Matter;2010-10
3. Surface Structure and Electronic Property of InP(001)-(2 × 1)S Surface: A First-Principles Study;Chinese Physics Letters;2010-04
4. Stability of sulfur induced reconstructions on InP() surfaces;Surface Science;2001-12
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