Stability of S and Se induced reconstructions on GaP(001)(2×1) surface-Reference-Cited by-同舟云学术

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Stability of S and Se induced reconstructions on GaP(001)(2×1) surface

Published:2010-10 Issue:20 Volume:405 Page:4262-4266
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Li Deng-feng,Guo Zhi-cheng,Xiao Hai-yan,Zu Xiao-tao,Gao Fei

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Chalcogenide passivation of III–V semiconductor surfaces

2. Optical characterisation of PTCDA films grown on passivated semiconductor substrates

3. Passivation of GaAs(001) surfaces by chalcogen atoms (S, Se and Te)

4. Selenium passivation of GaAs(001): a combined experimental and theoretical study

5. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and phase transformation of A III B V(100) semiconductor surface in interaction with selenium;Crystallography Reports;2015-03

2. Passivation of the GaP(111) surface by treatment in selenium vapors;Technical Physics Letters;2014-02

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