Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1×3)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference33 articles.
1. Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source
2. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
3. Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
4. Comparative study on the low pressure metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursors
5. Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. First-principles study of the interaction of H2O with the GaSb (001) surface;Journal of Applied Physics;2013-05-14
3. MOVPE growth of antimonide-containing alloy materials for long wavelength applications;Journal of Crystal Growth;2008-11
4. Mass-spectrometric monitoring of the thermally induced decomposition of trimethylgallium, tris(tert-butyl)gallium, and triethylantimony at low pressure conditions;Journal of the American Society for Mass Spectrometry;2008-07-01
5. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy;Journal of Crystal Growth;2007-05
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