Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103354
Reference15 articles.
1. Properties of MBE grown InSb and InSb1−xBix
2. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition
3. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition
4. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
5. Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy
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