Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference32 articles.
1. Band parameters for III–V compound semiconductors and their alloys
2. Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production
3. Dark current and infrared absorption of p-doped InGaAs/AlGaAs strained quantum wells
4. GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell
5. Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD
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1. Characterization of flexible dilute nitride InSbN thin films and exploratory study for epidermal optoelectronics;Materials Chemistry and Physics;2021-12
2. Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD;Journal of Alloys and Compounds;2020-05
3. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020
4. Nighttime Photovoltaic Cells: Electrical Power Generation by Optically Coupling with Deep Space;ACS Photonics;2019-11-20
5. Fundamental Aspects of MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
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