Comparative study on the low pressure metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursors-Reference-Cited by-同舟云学术

Comparative study on the low pressure metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursors

Published:1994-02 Issue:3-4 Volume:135 Page:434-440
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Behet M.,Stoll B.,Heime K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Improving the performance of InAs1−xSbx/InSb infrared detectors grown by metalorganic chemical vapor deposition

2. High‐mobility InSb grown by organometallic vapor phase epitaxy

3. Effect of total pressure on the uniformity of epitaxial GaAs films grown in the Ga-HCl-AsH3-H2 system

4. The growth of GaAs at reduced pressure in an organometallic CVD system

5. Compositional transients in MOCVD grown III–V heterostructures

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3. Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1×3);Surface Science;2000-03

4. Study of overgrowth heterostructure InSb GaAs by scanning electron acoustic microscopy;Journal of Materials Science;1999

5. Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition;Thin Solid Films;1997-04