Improving the performance of InAs1−xSbx/InSb infrared detectors grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
2. Photoluminescence and the band structure of InAsSb strained‐layer superlattices
3. Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD
4. High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
5. The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD
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