High‐mobility InSb grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105069
Reference8 articles.
1. Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD
2. Growth of InSb and InAs1 − x Sb x by OM‐CVD
3. Growth characteristics of LPE InSb and InGaSb
4. Distribution Coefficients and Carrier Mobilities in InSb
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