Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference40 articles.
1. Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
2. Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane
3. Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)c(4×4) surfaces
4. Heteroepitaxial growth of Al film on Si using dimethylethylamine-alane
5. Particle contamination in low pressure organometallic chemical vapor deposition reactors: Methods of particle detection and causes of particle formation using a liquid alane (AlH3) precursor
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