Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth-Reference-Cited by-同舟云学术

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Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth

Published:1995-01-01 Issue:Part 2, No. 1A Volume:34 Page:L17-L19
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumiya Yasuo,Kitahara Kuninori,Ohtsuka Nobuyuki,Nakajima Kazuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling rhenium metallization of a silicon-rich (001) 6H-SiC surface;Materials Science in Semiconductor Processing;2005-08

2. Disproportionation of dimethylalane on aluminum surfaces. Part I. Experimental studies;Surface Science;2001-08

3. Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD;Surface Science;2000-05

4. The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction;Thin Solid Films;1999-07

5. Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03

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