Particle contamination in low pressure organometallic chemical vapor deposition reactors: Methods of particle detection and causes of particle formation using a liquid alane (AlH3) precursor-Reference-Cited by-同舟云学术

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Particle contamination in low pressure organometallic chemical vapor deposition reactors: Methods of particle detection and causes of particle formation using a liquid alane (AlH3) precursor

Published:1993-11 Issue:6 Volume:11 Page:3026-3033
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Simmonds Michael G.,Gladfelter Wayne L.,Li Haojiang,McMurry Peter H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578292

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films;Chemistry of Materials;2021-02-09

2. Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations;physica status solidi (c);2015-05-13

3. Fourier transform infrared studies of the aluminum chemical vapor deposition using aluminum boro-hydride trimethylamine;Thin Solid Films;2010-02

4. Laser-Assisted Room-Temperature Film Growth Using a Constrained Pulsed Nozzle Expansion;Chemistry of Materials;2000-09-21

5. The use of aluminum and gallium hydrides in materials science;Coordination Chemistry Reviews;2000-09

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