The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(0 0 1)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Decoration of domain boundaries – group IV elements and IV–IV compounds – Si (001);Physics of Solid Surfaces;2018
2. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures;Nanotechnology;2005-09-02
3. Fabrication of contact electrodes in Si for nanoelectronic devices using ion implantation;Applied Surface Science;2005-01
4. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy;Nano Letters;2004-09-28
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