The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures-Reference-Cited by-同舟云学术

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The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Published:2005-09-02 Issue:10 Volume:16 Page:2446-2449
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Rueß F J,Oberbeck L,Goh K E J,Butcher M J,Gauja E,Hamilton A R,Simmons M Y

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/16/i=10/a=076/pdf

Reference24 articles.

1. Atom electronics: a proposal of atom/molecule switching devices

2. Prospects for atomically ordered device structures based on STM lithography

3. Towards the fabrication of phosphorus qubits for a silicon quantum computer

4. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

5. Four-probe resistance measurements of nickel wires written with a scanning tunneling microscope/scanning electron microscope system

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1. EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning;Nature Communications;2024-01-24

2. Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor;Nature Nanotechnology;2019-01-07

3. Addressable electron spin resonance using donors and donor molecules in silicon;Science Advances;2018-07-06

4. In Situ Patterning of Ultrasharp Dopant Profiles in Silicon;ACS Nano;2017-02-13

5. Radio frequency reflectometry and charge sensing of a precision placed donor in silicon;Applied Physics Letters;2015-08-31

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