In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Author:

Cooil Simon P.12ORCID,Mazzola Federico13,Klemm Hagen W.4,Peschel Gina4,Niu Yuran R.5,Zakharov Alexei A.5,Simmons Michelle Y.6,Schmidt Thomas4ORCID,Evans D. Andrew2,Miwa Jill A.7,Wells Justin W.1

Affiliation:

1. Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway

2. Department of Physics, Aberystwyth University, SY23 3BZ Aberystwyth, United Kingdom

3. School of Physics and Astronomy (SUPA), University of St. Andrews, St. Andrews, Fife KY16 9SS, United Kingdom

4. Fritz-Harber-Insitute Max-Planck Society, Faradayweg 4-6 14195 Berlin, Germany

5. MAX IV Laboratory, Lund University, 221 00 Lund, Sweden

6. Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia

7. Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark

Funder

Natur og Univers, Det Frie Forskningsr?d

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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